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2SK2084(L), 2SK2084(S)
Silicon N Channel MOS FET
REJ03G0995-0200 (Previous: ADE-208-1342) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC - DC converter
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2))
4
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S))
4 G 1 2 3 D 1. Gate 2. Drain 3. Source 4. Drain
1
23
S
Rev.2.00 Sep 07, 2005 page 1 of 7
2SK2084(L), 2SK2084(S)
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 20 20 7 28 7 20 150 -55 to +150 Unit V V A A A W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 20 20 -- -- 1.0 -- -- 5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.04 0.058 9 800 680 165 15 60 100 80 0.9 80 Max -- -- 10 100 2.5 0.053 0.075 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 16 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V*3 ID = 4 A, VGS = 4 V*3 ID = 4 A, VDS = 10 V*3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 4 A, VGS = 10 V, RL = 5
IF = 7 A, VGS = 0 IF = 7 A, VGS = 0, diF / dt = 20 A / s
Rev.2.00 Sep 07, 2005 page 2 of 7
2SK2084(L), 2SK2084(S)
Main Characteristics
Power vs. Temperature Derating
40 50 30
Maximum Safe Operation Area
10 s
PW
Channel Dissipation Pch (W)
30
Drain Current ID (A)
100 s
1
10 3 1
20
m = s 10 ms DC (1 (T O sh c = pe ot) Operation in 25 rati this area is on C limited by RDS(on) )
10
0.3 Ta = 25C 0 50 100 150 200 0.1 0.3 1 3 10 30
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
20 10 V 6V 4V Pulse Test 20
Typical Transfer Characteristics
Drain Current ID (A)
3.5 V 12
Drain Current ID (A)
16
16
VDS = 10 V Pulse Test
12
8 3V 4
VGS = 2.5 V
8 Tc = 75C 25C -25C 1 2 3 4 5
4
0
2
4
6
8
10
0
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS (on) (V)
0.5 Pulse Test 0.4
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
0.2 Pulse Test 0.1
VGS = 4 V
0.3
ID = 5 A
Static Drain to Source on State Resistance RDS (on) ()
0.05 10 V
0.2 2A 1A 0 2 4 6 8 10
0.1
0.02
0.01 0.1 0.2
0.5
1
2
5
10
20
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 7
2SK2084(L), 2SK2084(S)
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
0.20 Pulse Test 0.16 20 10 5 Tc = -25C 25C 75C
VDS = 10 V Pulse Test
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
0.12
VGS = 4 V
5A 1A 2A 1A 2A 5A 80 120 160
0.08
2 1 0.5 0.1
0.04 10 V 0 -40 0 40
0.2
0.5
1
2
5
10
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
200
10000
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
100
Capacitance C (pF)
1000
Ciss Coss
50 di / dt = 20 A / s VGS = 0, Ta = 25C
100
Crss
VGS = 0 f = 1 MHz
20
10 0.1
10
0.2
0.5
1
2
5
10
0
4
8
12
16
20
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
50 20 200
Switching Characteristics
td(off)
VDD = 20 V 10 V 5V
Switching Time t (ns)
40
VGS
16
100
tf VGS = 10 V VDD = 20 V PW = 5 s duty < 1 % tr td(on)
30
VDS
12
50
20
8
10
VDD = 20 V 10 V 5V
4 0 40
20
0
8
16
24
32
10 0.1
0.2
0.5
1
2
5
10
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 7
2SK2084(L), 2SK2084(S)
Reverse Drain Current vs. Source to Drain Voltage
20
Reverse Drain Current IDR (A)
Pulse Test 16 10 V 5V 12 VGS = 0, -5 V
8
4
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance S (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1 0.05
0.02
1
0.1
ch - c(t) = s (t) * ch - c ch - c = 6.25C/W, Tc = 25C
Pu lse
PDM PW T
0.03
0.0
1s
t ho
D=
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (s) Switching Time Test Circuit
Vin Monitor D.U.T. RL VDD = 20 V 90% td(on) 90% td(off) tf Vin Vout Vin 10 V 50 Vout Monitor 10% 10% 10%
Waveforms
90%
tr
Rev.2.00 Sep 07, 2005 page 5 of 7
2SK2084(L), 2SK2084(S)
Package Dimensions
JEITA Package Code
RENESAS Code
PRSS0004ZD-B
Package Name DPAK(L)-(2) / DPAK(L)-(2)V
MASS[Typ.] 0.42g
Unit: mm
6.5 0.5 5.4 0.5
1.7 0.5
2.3 0.2 0.55 0.1
4.7 0.5
16.2 0.5
3.1 0.5
1.15 0.1 0.8 0.1 (0.7)
5.5 0.5
1.2 0.3
0.55 0.1 2.29 0.5 2.29 0.5
0.55 0.1
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Package Name DPAK(S) / DPAK(S)V
MASS[Typ.] 0.28g
Unit: mm
1.5 0.5
6.5 0.5 5.4 0.5
(0.1) (0.1)
2.3 0.2 0.55 0.1
(5.1)
5.5 0.5
1.2 Max
0 - 0.25
(1.2)
2.5 0.5
1.0 Max. 2.29 0.5
0.8 0.1 2.29 0.5
0.55 0.1
Rev.2.00 Sep 07, 2005 page 6 of 7
(5.1)
2SK2084(L), 2SK2084(S)
Ordering Information
Part Name 2SK2084L-E 2SK2084STL-E Quantity 3000 pcs 3000 pcs Box (Sack) Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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